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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1833 description low collector saturation voltage : v ce(sat) = 1.0v(max.)@ i c = 4a high collector power dissipation good linearity of h fe wide area of safe operation applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current-continuous 7 a i cm collector current-pulse 10 a collector power dissipation @ t a =25 1.5 p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1833 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma; i b = 0 b 80 v v (br)cbo collector-base breakdown voltage i c = 50 a; i e = 0 100 v v (br)ebo emitter-base breakdown voltage i e = 50 a; i c = 0 5 v v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 0.4a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 0.4a b 1.5 v i cbo collector cutoff current v cb = 100v; i e = 0 10 a i ebo emitter cutoff current v eb = 4v; i c = 0 10 a h fe dc current gain i c = 1a; v ce = 5v 60 320 f t current-gain?bandwidth product i e = -0.5a; v ce = 5v 5 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 150 pf ? h fe classifications d e f 60-120 100-200 160-320 isc website www.iscsemi.cn 2 |
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